advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v low on-resistance r ds(on) 28m fast switching performance i d 6.9a p-ch bv dss -30v r ds(on) 36m description i d -6.3a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 30 -30 v v gs gate-source voltage 20 20 v i d @t a =25 continuous drain current 3 6.9 -6.3 a i d @t a =70 continuous drain current 3 5.5 -5 a i dm pulsed drain current 1 20 -20 a p d @t a =25 total power dissipation w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice 201126071 parameter 1 thermal data AP4503AGM rohs-compliant product 2 g2 d2 s2 g1 d1 s1 s1 g1 s2 g2 d1 d1 d2 d2 so-8 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =6a - - 28 m v gs =4.5v, i d =4a - - 42 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =6a - 6 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =6a - 8.4 13.5 nc q gs gate-source charge v ds =24v - 1.4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.7 - nc t d(on) turn-on delay time 2 v ds =20v - 5 - ns t r rise time i d =1a - 8 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 18.5 - ns t f fall time r d =20 -9- ns c iss input capacitance v gs =0v - 485 770 pf c oss output capacitance v ds =25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =6a, v gs =0 v , - 19 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc 2 AP4503AGM
AP4503AGM p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-6a - - 36 m v gs =-4.5v, i d =-4a - - 55 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-6a - 6 - s i dss drain-source leakage current (t j =25 o c) v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =-6a - 12.4 20 nc q gs gate-source charge v ds =-24v - 2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 7 - nc t d(on) turn-on delay time 2 v ds =-15v - 8 - ns t r rise time i d =-1a - 7 - ns t d(off) turn-off delay time r g =3.3 ? v gs =-10v - 34 - ns t f fall time r d =15 -26- ns c iss input capacitance v gs =0v - 860 1380 pf c oss output capacitance v ds =-25v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 140 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.7a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-6a, v gs =0 v , - 23 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 : /w when mounted on min. copper pad. this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 3 this product has been qualified for consumer market. applications or uses as criterial component in life support
n-channel fig 1. typical output characteristics fig 2. typical output characteristics 33?? ?? fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 AP4503AGM 0 10 20 30 40 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 : 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 : 10v 7.0v 5.0v 4.5v v g =3.0v 18 22 26 30 34 246810 v gs , gate-to-source voltage (v) r ds(on0 (m ) i d = 4a t a = 25 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
AP4503AGM n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics 30 -30
p-channel fig 1. typical output characteristics fig 2. typical output characteristics 33?? ?? fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 AP4503AGM 0 10 20 30 40 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c - 10v - 7.0v - 5.0v - 4.5v v g = - 3 .0v 0 10 20 30 40 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c - 10v - 7.0v - 5.0v - 4.5v v g = - 3 .0v 20 30 40 50 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -4 a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -6 a v g = - 10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 0.8 1.0 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
AP4503AGM p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics 33?? ?? fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 7 q v g -4.5v q gs q gd q g charge 0 3 6 9 12 15 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -6a v ds = -24v 10 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90%
package outline : so-8 millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e1 3.80 3.90 4.00 e 5.80 6.15 6.50 l 0.38 0.71 1.27 0 4.00 8.00 e 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ advanced power electronics corp. c detail a a1 a 4503a g m ywwsss package code part numbe r detail a l date code (ywwsss) y last digit of the year ww week sss sequence e b 1 34 5 6 7 8 2 d e1 e meet rohs requirement
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